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preliminary data october 1992 general purpose amplifier applications rf & microwave transistors .250 2lfl (s010) hermetically sealed . refractory\gold metallization . vswr capability 20:1 @ rated conditions . hermetic stripac a package . p out = 5.5 w min. with 9.6 db gain description the MSC82306 is a common base hermetically sealed silicon npn microwave power transistor utilizing a rugged overaly die geometry. this device is capable of withstanding 20:1 load vswr at any phase angle under rated conditions. the MSC82306 was designed for class c am- plifier/oscillator applications in the 1.5 - 2.3 ghz frequency range. pin connection branding 82306 order code MSC82306 absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation* (t c 50?c) 16.7 w i c device current* 900 ma v cc collector-supply voltage* 26 v t j junction temperature 200 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 9.0 c/w *applies only to rated rf amplifier operation MSC82306 1. collector 3. emitter 2. base 4. base thermal data 1/4
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 2.3 ghz p in = 0.6 w v cc = 22 v 5.5 6.3 w h cf = 2.3 ghz p in = 0.6 w v cc = 22 v 40 45 % g p f = 2.3 ghz p in = 0.6 w v cc = 22 v 9.6 10.2 db c ob f = 1 mhz v cb = 22 v 7.0 pf static symbol test conditions value unit min. typ. max. bv cbo i c = 1ma i e = 0ma 44 v bv ebo i e = 1ma i c = 0ma 3.5 v bv cer ic = 5ma r be = 10 w 44 v i cbo v cb = 22v 0.5 ma h fe v ce = 5v i c = 400ma 30 300 dynamic MSC82306 2/4
test circuit ref.: dwg. no. c125518 all dimensions are in inches. frequency 2.3 ghz rf amplifier power output test typical input impedance typical collector load impedance p in = 0.6 w v cc = 22 v normalized to 50 ohms z in z cl h h l m m l impedance data z in z cl freq. z in ( w )z cl ( w ) l = 2.0 ghz 2.60 + j 11.0 4.1 - j 6.5 m = 2.15 ghz 2.75 + j 12.5 3.3 - j 9.0 h = 2.3 ghz 2.30 + j 14.5 2.8 - j 10.5 MSC82306 3/4
package mechanical data information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a MSC82306 4/4

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